Nanoscale ultrafast metal-semiconductor-metal photodetectors

Author

Liu, Yanbing ; Khalil, Waleed ; Fischer, P.B. ; Chou, Stephen Y. ; Hsiang, T.Y. ; Alexandrou, S. ; Sobolewski, R.

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2674

Lastpage

2675

Abstract

Summary form only given. MSM PDs (metal-semiconductor-metal photodetectors) with finger spacing and width as small as 25 nm have been fabricated on bulk GaAs, LT (low-temperature-grown)-GaAs, and bulk Si, using a custom-built electron-beam lithography system. Measurements using an electrooptic sampling system with a 100-fs pulse laser showed that the shortest full width at half maximum impulse response and the highest 3-dB bandwidth of these nanoscale MSM PDs are, respectively, 0.87 ps and 480 GHz for MSM PDs on LT-GaAs, 1.5 ps and 300 GHz for bulk GaAs, and 10.7 ps and 40 GHz for bulk Si. Monte Carlo simulation was used to understand the impulse response of the MSM PDs and to explore the ultimate speed limitation of transit-time-limited MSM PDs on GaAs and Si. Comparison with experimental data showed that the long tail in responses of the MSM PDs on bulk GaAs and Si was primarily due to slow-moving holes instead of photoexcited carriers deep inside the semiconductor

Keywords

III-V semiconductors; electron beam lithography; elemental semiconductors; gallium arsenide; metal-semiconductor-metal structures; nanotechnology; photodetectors; silicon; transient response; 0.87 ps; 1.5 ps; 10.7 ps; 25 nm; 300 GHz; 40 GHz; 480 GHz; GaAs; Monte Carlo simulation; Si; bandwidth; custom-built electron-beam lithography; electrooptic sampling system; finger spacing; impulse response; nanoscale device; slow-moving holes; ultimate speed limitation; ultrafast metal-semiconductor-metal photodetectors; Fingers; Gallium arsenide; Lasers and electrooptics; Lithography; Optical pulses; Photodetectors; Pulse measurements; Sampling methods; Space vector pulse width modulation; Velocity measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163548

Filename

163548