DocumentCode :
948341
Title :
Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits
Author :
Asbeck, P.M. ; Chang, M.F. ; Wang, K.C. ; Miller, D.L. ; Sullivan, G.J. ; Sheng, N.H. ; Sovero, E. ; Higgins, J.A.
Volume :
35
Issue :
12
fYear :
1987
fDate :
12/1/1987 12:00:00 AM
Firstpage :
1462
Lastpage :
1468
Abstract :
This paper reviews the present status of GaAIAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with Fmax above 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltiages (BVCB0) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.
Keywords :
Doping; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Microwave technology; Millimeter wave integrated circuits; Photonic band gap; Semiconductor materials; Voltage;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1987.1133876
Filename :
1133876
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=948341
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