Title :
Strong TE-polarized intersubband absorption in InGaAs single-quantum-well waveguides
Author :
Peng, L.-H. ; Fonstad, C.G.
Author_Institution :
MIT, Cambridge, MA
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. The authors report the first unambiguous demonstration that ternary quantum-well (QW) intersubband transitions are TE (transverse electric), as well as TM (transverse magnetic), active, a result that has significant implications for the applications of these transitions in a variety of infrared detector structures. Using a unique waveguide measurement geometry, Fourier transform infrared absorption measurements have been made on a number of lattice-matched In 0.53Ga0.47As/In0.52Al0.48As and strained In0.7G a0.3As/AlAs/In0.52Al0.48As/In0.53 Ga0.47As single-QW waveguide heterostructures. These measurements show that both TE and TM polarized light can excite intersubband transitions
Keywords :
Fourier transform spectra; III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; infrared spectra of inorganic solids; light polarisation; optical waveguides; semiconductor quantum wells; Fourier transform infrared absorption; In0.53Ga0.47As-In0.52Al0.48 As; In0.7Ga0.3As-AlAs-In0.52Al 0.48As-In0.53Ga0.47As; TE active transitions; TE-polarized intersubband absorption; TM active transitions; TM polarized light; infrared detector structures; single-quantum-well waveguides; waveguide measurement geometry; Capacitive sensors; Electromagnetic wave absorption; Gallium arsenide; Geometrical optics; Indium gallium arsenide; Infrared detectors; Nanoscale devices; Optical polarization; Optical waveguides; Tellurium;
Journal_Title :
Electron Devices, IEEE Transactions on
