Title :
Normal incident infrared detector using intervalence band absorption of Si1-xGex/Si multiple quantum wells
Author :
Karunasiri, R.P.G. ; Park, Joon S. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. The authors report the demonstration of normal incident infrared detection using intervalence-band absorption in Si1-xGex/Si multiple quantum wells. In this case, the transition occurs between different hole bands due to the mixing of the s-like Γ-conduction band Bloch state with p-like hole bands, particularly at large k values. This mechanism is different from the previously reported free-carrier absorption process
Keywords :
Ge-Si alloys; conduction bands; infrared detectors; infrared spectra of inorganic solids; semiconductor materials; semiconductor quantum wells; silicon; valence bands; Si1-xGex-Si multiple quantum wells; hole bands; intervalence band absorption; normal incident infrared detection; p-like hole bands; s-like Γ-conduction band Bloch state; Capacitive sensors; Electromagnetic wave absorption; Gallium arsenide; Geometrical optics; Infrared detectors; Nanoscale devices; Optical polarization; Optical waveguides; Probability distribution; Tellurium;
Journal_Title :
Electron Devices, IEEE Transactions on
