The phototransistor revisited: all-bipolar monolithic photoreceiver at 2 Gb/s with high sensitivity

Summary form only given. The authors revisit the three-terminal phototransistor and demonstrate the application of the HPT (heterojunction phototransistor) at 2 Gb/s in an all-bipolar monolithic photoreceiver. They also show a performance comparable to the best p-i-n photoreceiver. The phototransistors were fabricated from epitaxial layers grown by metal-organic molecular beam epitaxy on a Fe-doped semi-insulating InP substrate. The phototransistor had a small-signal electrical current gain between 150 and 200. The quantum efficiency of the base-collector photodiode was 40%. Microwave on-wafer measurements yielded a unity current gain cutoff frequency of 30 GHz and a maximum oscillation frequency of 20 GHz at a collector current of 5.0 mA. The small-signal frequency response of the packaged monolithic photoreceiver indicated a 3-dB bandwidth of 1.1 GHz, at a wavelength of 1.53 μm, with no peaking in the response