• DocumentCode
    948385
  • Title

    Electrical properties of laser-annealed donor-implanted GaAs

  • Author

    Sealy, B.J. ; Kular, S.S. ; Stephens, K.G. ; Croft, R. ; Palmer, A.

  • Author_Institution
    University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK
  • Volume
    14
  • Issue
    22
  • fYear
    1978
  • Firstpage
    720
  • Lastpage
    721
  • Abstract
    A Q-switched ruby laser has been used to anneal GaAs implanted with selenium or tellurium ions. Electron concentrations in the range 1¿2 × 1019 cm¿3 were measured for samples implanted at room temperature or 200°C with a dose of 1¿5 × 1015 ions cm¿2. High electrical activities were obtained both with and without Si3N4 coatings.
  • Keywords
    III-V semiconductors; annealing; carrier density; gallium arsenide; ion implantation; selenium; semiconductor doping; tellurium; GaAs; Q-switched ruby laser; Rutherford backscattering; Si3N4 coatings; electrical properties; electron concentrations; laser annealed donor implanted; selenium; tellurium ions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780484
  • Filename
    4242689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948385