Title :
Room-temperature 1.3- and 1.5-μm electroluminescence from Si/Si 1-xGex quantum wells
Author :
Mi, Q. ; Xiao, X. ; Sturm, J.C. ; Lenchyshyn, L.C. ; Thewalt, M.L.W.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. The authors report the first room-temperature electroluminescence (EL) from Si/SiGe quantum-well structures with peak emissions at 1.3 and 1.5 μm. The peak intensities are relatively insensitive to temperature from 77 to 300 K. The LED (light emitting diode) has a p-i-n structure with an active intrinsic region which consists of ten 60-Å Si0.65Ge 0.35 quantum wells for the 1.3-μm device and a single 13-Å Ge layer for the 1.5-μm device. Well-resolved low-temperature (4 K) photoluminescence (PL) shows that the 1.3-μm luminescence is from the no-phonon band-edge exciton recombination in the Si0.65Ge0.35 quantum wells. The same physical mechanism is responsible for room-temperature 1.3-μm luminescence. The internal quantum efficiency of the 1.3-μm LED diode is estimated to have a lower limit of 2×10-4
Keywords :
Ge-Si alloys; electroluminescence; elemental semiconductors; light emitting diodes; luminescence of inorganic solids; photoluminescence; semiconductor quantum wells; silicon; 1.3 micron; 1.5 micron; 4 K; 77 to 300 K; LED; Si-Si1-xGex quantum wells; Si0.65Ge0.35 quantum wells; active intrinsic region; internal quantum efficiency; no-phonon band-edge exciton recombination; p-i-n structure; photoluminescence; room-temperature electroluminescence; Electroluminescence; Excitons; Germanium silicon alloys; Light emitting diodes; Luminescence; PIN photodiodes; Photoluminescence; Quantum wells; Silicon germanium; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
