DocumentCode :
948400
Title :
Successful Alloy Attachment of GaAs MMIC´s
Author :
Pavio, Jeanne S
Volume :
35
Issue :
12
fYear :
1987
fDate :
12/1/1987 12:00:00 AM
Firstpage :
1507
Lastpage :
1511
Abstract :
Alloy attachment of GaAs monolithic circuits was examined after initial reflow, after environmental bake, and after a stepped series of thermal cycles from 200 to 1000 cycles (-55 to + 125°C). The variety of solders tested included both pastes and preforms. Monolithic assemblies alloyed with these solders were evaluated for changes in physical properties as well as for changes in electrical performance. It was noted during the study that via fractures due to thermal expansion differences between the alloy and the GaAs monolithic device were a common occurrence and could become an inherent reliability risk. Based on this evidence, an investigation relating the frequency of fracturing to the size and the shape of the vias was undertaken. Results led to the development of processing parameters which could minimize and control fracture occurrence.
Keywords :
Circuits; Gallium arsenide; Gold; Impedance; Intermetallic; Preforms; Radio frequency; Testing; Thermal expansion; Tin;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1987.1133882
Filename :
1133882
Link To Document :
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