Title :
C.W. modelocking of a GaInAsP diode laser
Author_Institution :
Massachusetts Institute of Technology, Research Laboratory of Electronics, Department of Electrical Engineering & Computer Science, Cambridge, USA
Abstract :
Active c.w. modelocking of a GaInAsP double-heterostructure laser diode operating in an external cavity is reported. 18 ps pulses (f.w.h.m.) are obtained at a repetition rate of 2.1 GHz and a lasing wavelength of 1210 nm. The pulses were measured by autocorrelation using s.h.g. in LiIO3. They are the shortest pulses ever reported for a c.w. laser diode.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 2.1 GHz; CW modelocking; GaInAsP diode laser; LiIO3; SHG; autocorrelation; double heterostructure laser diode; external cavity; pulses; repetition rate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780489
