30-mW 690-nm high-power strained-quantum-well AlGaInP laser

Author

Ueno, Yoshiyasu ; Fujii, Hiroaki ; Sawano, Hiroyuki ; Kobayashi, Kenichi ; Hara, Kunihiro ; Gomyo, Akiko ; Endo, Kenji

Author_Institution

NEC Corp., Ibaraki, Japan

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1851

Lastpage

1856

Abstract

A high-power 690-nm AlGaInP laser for use in a high-density rewritable-optical-disk memory system is presented. The deterioration of its temperature characteristics, which results from the high-power-oriented laser structure, is improved by using compressively strained GaInP quantum wells as the active layer. Output power of 40 mW is achieved up to 80°C. Stable fundamental-transverse-mode operation is obtained up to 50 mW. Output-power-induced facet degradation is suppressed by an Al₂O₃ facet coating. The lasers operate stably at 30 mW at 50°C for over 2600 h. The mean extrapolated lifetime is 10000 h

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser modes; semiconductor lasers; 10000 h; 2600 h; 30 mW; 40 mW; 50 degC; 50 mW; 690 nm; 80 degC; Al₂O₃ facet coating; AlGaInP; GaInP; facet degradation; fundamental-transverse-mode operation; high-density rewritable-optical-disk memory system; semiconductors; temperature characteristics; Coatings; Degradation; Laser stability; Laser theory; Optical recording; Power generation; Power lasers; Quantum well lasers; Reflectivity; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234443

Filename

234443