Title :
Threshold dependence on active-layer thickness in InGaAsP/InP d.h. lasers
Author :
Nahory, R.E. ; Pollack, M.A.
Author_Institution :
Bell Telephone Laboratories, Holmdel, USA
Abstract :
Room-temperature threshold current density Jth against active-layer thickness d is reported for pulsed InGaAsP/InP double-heterostructure lasers operating at wavelengths near 1.23 ¿m. For d ¿ 1 ¿m, Jth/d is 5.0 kA cm¿2 ¿m¿1, whereas the lowest threshold is 1.6 kA cm¿2 for d ¿ 0.2 ¿m. The threshold dependence is fitted by a numerical calculation based on a two-parameter gain model.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; InGaAsP/InP; active layer thickness; double heterostructure lasers; room temperature threshold current density; threshold dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780491
