150 mW fundamental-transverse-mode operation of 670 nm window laser diode

Author

Arimoto, Satoshi ; Yasuda, Mikako ; Shima, Akihiro ; Kadoiwa, Kaoru ; Kamizato, Takeshi ; Watanabe, Hitoshi ; Omura, Etsuji ; Aiga, Masao ; Ikeda, Kenji ; Mitsui, Shigeru

Author_Institution

Mitsubishi Electronic Corp., Hyogo, Japan

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1874

Lastpage

1879

Abstract

Fundamental-transverse-mode high-power CW operation over 150 mW has been realized in AlGaInP/GaInP 670-nm window laser diodes. A window structure of Zn-induced-disordered GaInP has been fabricated by solid phase diffusion using ZnO film. A compressively strained double-quantum-well active layer and a multiple quantum barrier (MQB) also have been employed for reduction of threshold current. Stable CW operation beyond 1500 h has been observed under 50 mW at 50°C

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser modes; optical workshop techniques; semiconductor lasers; vapour phase epitaxial growth; 150 mW; 1500 h; 50 degC; 50 mW; 670 nm; AlGaInP-GaInP; ZnO film; compressively strained double-quantum-well active layer; fundamental-transverse-mode operation; high-power CW operation; multiple quantum barrier; semiconductors; solid phase diffusion; threshold current; window structure; Diode lasers; Electron optics; Heterojunctions; Mirrors; Optical films; Optical materials; Quantum well devices; Temperature; Threshold current; Zinc oxide;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234447

Filename

234447