Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs cladding layers

Author

Unger, Peter ; Bona, Gian-Luca ; Germann, Roland ; Roentgen, Peter ; Webb, David J.

Author_Institution

Zurich Res. Lab., Ruschlikon, Switzerland

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1880

Lastpage

1884

Abstract

Visible lasers with two strained GaInP quantum wells and AlGaAs cladding layers have been fabricated using metalorganic vapor phase epitaxy. A dry-etched surface ridge has been chosen as a device structure, which results in a small astigmatism and a low threshold current. Owing to an electroplated heat spreader on top of the ridge, the devices can be operated continuous-wave (CW) junction-side-up at temperatures up to 100°C. Lasers mounted junction-side-down with coated mirror facets operating at 30 mW output power show single-mode behavior and good reliability, as proven by a lifetime test of over 3000 h

Keywords

III-V semiconductors; aberrations; aluminium compounds; gallium arsenide; gallium compounds; laser beams; optical workshop techniques; semiconductor lasers; vapour phase epitaxial growth; 100 degC; 30 mW; 3000 h; AlGaAs cladding layers; CW lasers; GaInP; GaInP-AlGaAs; astigmatism; coated mirror facets; dry-etched surface ridge; electroplated heat spreader; lifetime test; metalorganic vapor phase epitaxy; quantum-well ridge lasers; semiconductors; single-mode behavior; threshold current; visible lasers; Diode lasers; Epitaxial growth; Laser modes; Memory; Power generation; Power lasers; Quantum well lasers; Semiconductor lasers; Threshold current; Vision defects;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234448

Filename

234448