DocumentCode
948513
Title
Important loss mechanisms in visible lasers revealed by hydrostatic pressure
Author
Hawley, M. ; Adams, A.R. ; Silver, M. ; Reilly, E. P O ; Valster, A.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
Volume
29
Issue
6
fYear
1993
fDate
6/1/1993 12:00:00 AM
Firstpage
1885
Lastpage
1888
Abstract
It is found that above 10 kbar, the effect of pressure on the threshold current of visible lasers is to increase losses to the X minima in the barriers. Below 10 kbar the threshold current remains relatively constant with pressure. By monitoring the lasing wavelength, the pressure dependence of the direct band gap of ordered GaInP has been measured to be 7 meV/kbar. Considerations of the effect of strain in the active region of a laser suggest that increases in I th for tensile strained visible lasers as a function of increasing strain are due to losses from the Γ minimum to X minima in the well. Similar increases in I th observed at high compressive strains can be explained by the reduction in well width, and hence optical confinement factor, which is necessary to maintain the same operating wavelength as the strain is increased
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser beams; optical losses; semiconductor lasers; Γ minimum; 10 kbar; GaInP; X minima; active region; direct band gap; hydrostatic pressure; lasing wavelength; operating wavelength; optical confinement factor; pressure dependence; semiconductors; strain effect; tensile strained visible lasers; threshold current; visible lasers; well width; Capacitive sensors; Gallium arsenide; Laser theory; Photonic band gap; Pressure measurement; Quantum well lasers; Silver; Substrates; Temperature; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.234449
Filename
234449
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