Title :
600 mW CW single-mode GaAlAs triple-quantum-well laser with a new index guided structure
Author :
Imafuji, Osamu ; Takayama, Toru ; Suguira, H. ; Yuri, Masaaki ; Naito, Hiroki ; Kume, Masahiro ; Itoh, Kunio
Author_Institution :
Matsushita Electron. Corp., Osaka, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
A very-high-power, single-mode GaAlAs triple-quantum-well (TQW) laser with a novel real refractive index guided structure has been developed. The maximum output power of 720 mW CW and single transverse- and longitudinal-mode operation up to 600 mW CW have been achieved in a single-element device. This excellent mode operation is attained by using the real refractive index guided structure with a GaAlAs current-blocking layer which gives a low effective refractive index step, suppressing the spatial hole-burning effect in the high-power range
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser modes; semiconductor lasers; 600 mW; 720 nW; GaAlAs; current-blocking layer; mode operation; output power; refractive index guided structure; spatial hole-burning effect; triple-quantum-well laser; Chemical lasers; Diode lasers; Laser modes; Optical harmonic generation; Optical refraction; Optical variables control; Optical waveguides; Power generation; Quantum well lasers; Refractive index;
Journal_Title :
Quantum Electronics, IEEE Journal of
