Title :
1.48 μm high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes
Author :
Namegaya, Takeshi ; Katsumi, Ryuichi ; Iwai, Norihiro ; Namiki, Shu ; Kasukawa, Akihiko ; Kiratani, Y. ; Kikuta, Toshio
Author_Institution :
Furukawa Electric Co. Ltd., Yokohama, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
High-power 1.48-μm graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes (GRIN-SCH MQW LDs) have been investigated in terms of the beam divergence, threshold current, and differential quantum efficiency. A calculation predicts that narrow beam divergence perpendicular to the junction plane could be obtained by the use of small number of step quaternary layers with wide bandgap. Experimentally, the threshold current increased due to the small optical confinement, although the beam divergence became small. The full width at half maximum (FWHM) of the far-field pattern in the horizontal direction was 20° and that in the vertical direction was 25°. Output power as high as 208 mW was achieved at a driving current of 1000 mA for a 1-mm-long device. Stable transverse mode operation was confirmed up to the maximum output power. Coupling efficiency of 89% and output power from a single-mode fiber of 185 mW were obtained at 25°C
Keywords :
III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; laser beams; semiconductor lasers; 1.48 micron; 1000 mA; 208 mW; GRIN-SCH MQW LDs; GaInAsP-InP; beam divergence; coupling efficiency; differential quantum efficiency; far-field pattern; optical confinement; output power; quaternary layers; semiconductors; single-mode fiber; threshold current; transverse mode operation; Diode lasers; Erbium-doped fiber lasers; Laser beams; Optical coupling; Optical waveguides; Planar waveguides; Power generation; Quantum well devices; Threshold current; Waveguide junctions;
Journal_Title :
Quantum Electronics, IEEE Journal of
