Title :
0.98-1.02 μm strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides
Author :
Ishikawa, Shin ; Fukagai, Kazuo ; Chida, Hiroaki ; Miyazaki, Takashi ; Fujii, Hiroaki ; Endo, Kenji
Author_Institution :
NEC Corp., Ibaraki, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
Strained InGaAs/AlGaAs double-quantum-well laser diodes (LDs) with GaInP buried waveguides operating at 0.98-1.02 μm have been developed as light sources for pumping fiber amplifiers. These LDs have a flat surface and a low-loss real index waveguide that provides high differential quantum efficiency and efficient heat dissipation. For 0.98-μm LDs, stable operation for over 10000 h under 100 mW conditions at 50°C has been achieved, and the extrapolated lifetime is estimated to be 60000 h at 50°C. For 1.02-μm LDs, a maximum light output power of 415 mW, fiber output power as high as 70 mW, and stable operation for over 2300 h at 100 mW and 50°C have been obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; optical waveguides; semiconductor lasers; 0.98 to 1.02 micron; 100 mW; 10000 h; 415 mW; 50 degC; 60000 h; 70 mW; InGaAs-AlGaAs; double quantum-well high-power lasers; fiber amplifiers; heat dissipation; light sources; semiconductors; Diode lasers; Indium gallium arsenide; Laser excitation; Life estimation; Lifetime estimation; Light sources; Power generation; Quantum well lasers; Quantum wells; Surface waves;
Journal_Title :
Quantum Electronics, IEEE Journal of