• DocumentCode
    948615
  • Title

    Fabrication of a m.o.s.f.e.t. with `spoxide¿ as the gate dielectric having low interface state density

  • Author

    Chakrabarti, Utpal Kumar

  • Author_Institution
    Indian Institute of Technology, Centre for Applied Research in Electronics, New Delhi, India
  • Volume
    14
  • Issue
    24
  • fYear
    1978
  • Firstpage
    754
  • Lastpage
    756
  • Abstract
    Spin-on oxide (Spoxide), which forms part of the class of deposited oxides, has been found to produce a good electrical interface with silicon after HCl annealing, and surface-state densities of the order of 4 × 1010 eV¿1 cm¿2 are easily achievable. An n-channel depletion-type m.o.s.f.e.t. has been fabricated with Spoxide as the gate dielectric.
  • Keywords
    insulated gate field effect transistors; MOSFET; gate dielectric; interface state density; n-channel depletion type device; spin on oxide; spoxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780511
  • Filename
    4242797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948615