Title :
CBE grown 1.5 μm GaInAsP-InP surface emitting lasers
Author :
Uchida, Takashi ; Miyamoto, Tomoyuki ; Yokouchi, Noriyuki ; Inaba, Yuichi ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
GaInAsP-InP surface-emitting (SE) lasers have been fabricated using chemical beam epitaxy (CBE) and their lasing characteristics investigated. A threshold current of 2.6 mA was obtained under 77 K CW operation for a device with an improved GaInAsP contact layer having 0.1-μm thickness and relatively low hole concentration (1x1019 cm-3) to reduce the optical loss. A hybrid mirror consisting of a semiconductor distributed Bragg reflector (DBR) and Si-SiO2 multilayers is introduced. Threshold current as low as 1.7 mA was obtained at 77 K CW operation, the lowest values at 77 K for long-wavelength SE lasers ever reported. Near-room-temperature pulsed operation was also obtained for both structures
Keywords :
chemical beam epitaxial growth; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser accessories; laser beams; mirrors; optical losses; optical workshop techniques; semiconductor lasers; 1.5 micron; 1.7 mA; 2.6 mA; 298 K; 77 K; CW operation; GaInAsP-InP; Si-SiO2 multilayers; chemical beam epitaxy; hybrid mirror; lasing characteristics; optical loss; pulsed operation; semiconductor distributed Bragg reflector; semiconductors; surface emitting lasers; threshold current; Chemical lasers; Distributed Bragg reflectors; Epitaxial growth; Laser beams; Mirrors; Molecular beam epitaxial growth; Optical devices; Optical losses; Surface emitting lasers; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
