Title :
High-power GaAs f.e.t. prepared by molecular-beam epitaxy
Author :
Wataze, M. ; Mitsui, Yoshifuru ; Shimanoe, T. ; Nakatani, Masahiro ; Mitsui, S.
Author_Institution :
Mitsubishi Electric Corporation, Semiconductor Laboratory, Itami, Japan
Abstract :
High-power GaAs field-effect transistors were fabricated on molecular-beam epitaxial GaAs crystals. Devices with a power output at 1 dB gain compression of 4.0 W, a corresponding linear gain of 5.4 dB and a power-added efficiency as high as 35% have been realised.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; molecular beam epitaxial growth; power transistors; semiconductor growth; solid-state microwave devices; FET; GaAs; MBE; MESFET; power transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780514
