• DocumentCode
    948660
  • Title

    High-power GaAs f.e.t. prepared by molecular-beam epitaxy

  • Author

    Wataze, M. ; Mitsui, Yoshifuru ; Shimanoe, T. ; Nakatani, Masahiro ; Mitsui, S.

  • Author_Institution
    Mitsubishi Electric Corporation, Semiconductor Laboratory, Itami, Japan
  • Volume
    14
  • Issue
    24
  • fYear
    1978
  • Firstpage
    759
  • Lastpage
    761
  • Abstract
    High-power GaAs field-effect transistors were fabricated on molecular-beam epitaxial GaAs crystals. Devices with a power output at 1 dB gain compression of 4.0 W, a corresponding linear gain of 5.4 dB and a power-added efficiency as high as 35% have been realised.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; molecular beam epitaxial growth; power transistors; semiconductor growth; solid-state microwave devices; FET; GaAs; MBE; MESFET; power transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780514
  • Filename
    4242804
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948660