Title :
Spatial distribution of defects in SiO2
Author :
Mughal, H.A. ; Eccleston, W. ; Stuart, R.A.
Author_Institution :
University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
Abstract :
Predictions of the yield of integrated circuits are at present based on the assumption that defects are distributed spatially over the surface of a silicon slice according to Bose-Einstein statistics. In this letter it is shown, by means of the liquid-crystal technique, that at least one type of defect which can occur in integrated circuits-the oxide defect-obeys Poisson statistics.
Keywords :
insulating thin films; monolithic integrated circuits; silicon compounds; SiO2; defects; integrated circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780515
