Title :
Monolithic InGaAsP-InP laser amplifier gate switch matrix
Author :
Burton, Julie D. ; Fiddyment, Phil J. ; Robertson, Michael J. ; Sully, Peter
Author_Institution :
BT Labs., Martlesham Heath, UK
fDate :
6/1/1993 12:00:00 AM
Abstract :
An InGaAsP-InP 2×2 laser amplifier gate switch matrix operating at 1.5 μm with a fiber-to-fiber insertion loss of 3 dB is reported. The switch consists of passive waveguides for branching and recombining, monolithically integrated with laser amplifiers. The passive waveguides perform the signal routing, and the amplifiers provide gain/absorption in each path for on/off switching, achieving gain in the on state to compensate the losses. Dry-etched total internal reflection mirrors are employed as 90° waveguide corner mirrors and also incorporated in the splitters in order to give a compact design. The on/off extinction ratio is >45 dB and the crosstalk is <-45 dB
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser accessories; mirrors; optical losses; optical switches; optical waveguides; semiconductor lasers; -45 dB; 1.5 micron; 3 dB; 45 dB; InGaAsP-InP; compact design; fiber-to-fiber insertion loss; gain/absorption; laser amplifier gate switch matrix; laser amplifiers; on/off extinction ratio; on/off switching; passive waveguides; semiconductor; signal routing; splitters; total internal reflection mirrors; waveguide corner mirrors; Absorption; Fiber lasers; Insertion loss; Mirrors; Optical reflection; Performance gain; Routing; Switches; Transmission line matrix methods; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
