Title :
Submicrosecond X-ray lithography
Author :
Nagel, David J. ; Peckerar, M.C. ; Whitlock, R.R. ; Greig, J.R. ; Pechacek, R.E.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
X-rays from laser-heated plasmas were used to replicate features as fine as 750 nm in the positive resist polybutene-1-sulfone (p.b.s.). The measured sensitivities of p.b.s. to pulsed and d.c. X-rays (¿ 109 ratio in exposure rate) are similar (no reciprocity loss). Laser-plasma X-rays produced only small (0.25 V) flat-band shifts in m.o.s. capacitors at irradiation levels sufficient to expose p.b.s.
Keywords :
X-ray applications; photolithography; photoresists; X-ray lithography; laser heated plasmas, photolithography; polybutene-1-sulphone; positive resist;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780528
