• DocumentCode
    948798
  • Title

    Power-handling capability of GaAs m.e.s.f.e.t.s

  • Author

    Kohn, E.

  • Author_Institution
    AEG-Telefunken, Röhrenwerk, Ulm, West Germany
  • Volume
    14
  • Issue
    24
  • fYear
    1978
  • Firstpage
    786
  • Lastpage
    788
  • Abstract
    The limits in output power and power gain are considered with and without a stationary dipole domain in the channel. It follows that c.w. power levels of 5 W/mm and power gains normalised on frequency as high as 60 dBGHz2 are possible for gate lengths of 1 ¿m.
  • Keywords
    Schottky gate field effect transistors; power transistors; GaAs; MESFET; output power; power gain; stationary dipole domain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780531
  • Filename
    4242898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948798