Title :
Power-handling capability of GaAs m.e.s.f.e.t.s
Author_Institution :
AEG-Telefunken, Röhrenwerk, Ulm, West Germany
Abstract :
The limits in output power and power gain are considered with and without a stationary dipole domain in the channel. It follows that c.w. power levels of 5 W/mm and power gains normalised on frequency as high as 60 dBGHz2 are possible for gate lengths of 1 ¿m.
Keywords :
Schottky gate field effect transistors; power transistors; GaAs; MESFET; output power; power gain; stationary dipole domain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780531
