DocumentCode :
948951
Title :
Semiconductor-laser self pulsing due to deep level traps
Author :
Copeland, John A.
Author_Institution :
Bell Telephone Laboratories, Crawford Hill Laboratory, Holmdel, USA
Volume :
14
Issue :
25
fYear :
1978
Firstpage :
809
Lastpage :
810
Abstract :
By adding a rate equation for the charge state of deep-level traps to the rate equations for electron and photon density, it is shown that the observed self pulsing observed in semiconductor lasers can be due to the presence of deep-level traps with less than 1017 cm¿3 density.
Keywords :
electron traps; semiconductor junction lasers; deep level traps; electron density; photon density; rate equation; self pulsing; semiconductor lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19780546
Filename :
4242942
Link To Document :
بازگشت