DocumentCode :
948959
Title :
Pseudo epi-cost reduction approach and a paradigm shift in substrate material
Author :
Aminzadeh, Mehran ; Ravi, K.V. ; Sery, George E. ; Conley, Amiad ; Casperson, Matt
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Volume :
15
Issue :
4
fYear :
2002
fDate :
11/1/2002 12:00:00 AM
Firstpage :
486
Lastpage :
492
Abstract :
Historically, P/P+ epitaxial wafers have been utilized for CMOS products for more than two decades. The epitaxial wafers have several key characteristics such as latch up immunity, oxygen-free active areas, superior oxide quality, and gettering capability compared to bulk nonepi wafers. The epi wafers, however, are costly. Pseudo epi is an alternative to epi wafers with equivalent device performance and material cost savings of 20%-25%. Pseudo epi or high-temperature hydrogen anneal is expected to save a significant percentage of start material costs over the epi substrate for logic family products where epi wafers have dominated the market.
Keywords :
CMOS digital integrated circuits; elemental semiconductors; getters; integrated circuit economics; semiconductor epitaxial layers; silicon; CMOS; P/P+ epitaxial wafers; Si; active areas; digital integrated circuits; gettering; latch up immunity; logic family products; material cost savings; oxide quality; pseudo epi-cost reduction; start material costs; substrate material; Annealing; Costs; Epitaxial layers; Gettering; Hydrogen; Microprocessors; Production facilities; Semiconductor materials; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2002.804891
Filename :
1134165
Link To Document :
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