Title :
Transient response of a transistor employing limited saturation device technique
Author :
Chauhan, A.S. ; Srivastava, A. ; Maheshwari, L.K.
Author_Institution :
Birla Institute of Technology and Science, Pilani, Raj, India
fDate :
6/1/1977 12:00:00 AM
Abstract :
Charge control analysis the transient behaviour of a transistor employing limited saturation device (LSD) technique has been presented. The calculated transient response has been compared with the corresponding experimental observations using epitaxial planar transistors and good agreement has been obtained.
Keywords :
Capacitance; Equations; Logic circuits; Logic devices; Piecewise linear approximation; Schottky diodes; Time measurement; Transient response; Transistors; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1977.10601
