DocumentCode
948968
Title
Transient response of a transistor employing limited saturation device technique
Author
Chauhan, A.S. ; Srivastava, A. ; Maheshwari, L.K.
Author_Institution
Birla Institute of Technology and Science, Pilani, Raj, India
Volume
65
Issue
6
fYear
1977
fDate
6/1/1977 12:00:00 AM
Firstpage
986
Lastpage
987
Abstract
Charge control analysis the transient behaviour of a transistor employing limited saturation device (LSD) technique has been presented. The calculated transient response has been compared with the corresponding experimental observations using epitaxial planar transistors and good agreement has been obtained.
Keywords
Capacitance; Equations; Logic circuits; Logic devices; Piecewise linear approximation; Schottky diodes; Time measurement; Transient response; Transistors; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1977.10601
Filename
1454870
Link To Document