Title :
New estimate of the minimum noise figure of a m.e.s.f.e.t.
Author :
Brewitt-Taylor, C.R. ; Robson, P.N. ; Sitch, J.E.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
New estimates of the drain and gate noise multiplication parameters, the correlation coefficient and the minimum noise figure for a m.e.s.f.e.t. are advanced. For an uncooled GaAs m.e.s.f.e.t. having a 1 ¿m gate length, a minimum possible noise figure of 1 dB at 10 GHz is predicted. InP is only marginally better.
Keywords :
Schottky gate field effect transistors; electron device noise; solid-state microwave devices; 10 GHz; GaAs; InP; MESFET; correlation coefficient; drain noise; gate noise multiplication parameters; minimum noise figure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780553
