Title :
GaInAsP twin-stripe lasers with asymmetrical waveguide channels
Author :
Wolf, Th. ; Kappeler, F. ; Stegm¿¿ller, B. ; Amann, M.-C.
Author_Institution :
Siemens AG, Research Laboratories, Munich, West Germany
fDate :
2/1/1988 12:00:00 AM
Abstract :
Design and lasing characteristics of ¿¿=1.3 ¿¿m GaInAsP twin-stripe (TS) metal-clad ridge-waveguide lasers, with a varying degree of index guiding between the channels are reported. The TS devices operate stably in the TE polarised mode, even if under single-stripe injection TM polarisation is observed. Effective longitudinal mode selectivity has been obtained for the TS lasers with an effective index step in the range of 1¿¿10¿¿2 to 5¿¿10¿¿3 between the channels. This mode selectivity can be explained by assuming coupling of lateral modes of the twin waveguide structure via the common gain-medium.
Keywords :
gallium arsenide; gallium compounds; indium compounds; laser transitions; optical waveguides; semiconductor junction lasers; 1.3 micron; GaInAsP; TE polarised mode; TM polarisation; asymmetrical waveguide channels; index guiding; longitudinal mode selectivity; metal-clad ridge-waveguide lasers; semiconductor; twin-stripe lasers;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j.1988.0003
