Title :
Remediable and nonremediable causes of parasitic elements in InP m.e.s.f.e.t.s
Author :
Wada, Tomotaka ; Frey, Jeffrey
Author_Institution :
Cornell University, Department of Electrical Engineering, Ithaca, USA
Abstract :
Two-dimensional analyses of InP and GaAs m.e.s.f.e.t. structures are used to qualitatively explain relative magnitudes of parasitic element values observed in experimental InP m.e.s.f.e.t.s. Large drain-gate capacitance observed in InP is attributed mainly to substrate conduction, whereas large drain conductance at certain drain biases in InP may be unavoidable due to large velocity dropback and large high-field diffusion in this material. Low Schottky-barrier height and substrate conduction also increase gD
Keywords :
Schottky gate field effect transistors; GaAs; InP; MESFET; Schottky barrier height; drain biases; drain conductance; drain gate capacitance; high field diffusion; parasitic element; substrate conduction; two dimensional analysis; velocity dropback;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780562
