Title :
Analysis of slow-wave transmission lines on multi-layered semiconductor structures including conductor loss
Author :
Liou, Jenn-chorng ; Lau, Kei May
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
Metal lines on semiconductor devices and circuits sometimes show slow-wave phenomena. To determine signal transmission characteristics along the lines, the typical assumption that metal is perfectly conducting is not always valid. A simple and accurate means is used here to include metallic loss in spectral domain analysis of planar transmission lines built on multilayer semiconducting media. Experimental results with a modulation-doped field-effect transistor (MODFET) structure and comparison with the calculations are presented
Keywords :
MMIC; high electron mobility transistors; losses; microstrip lines; solid-state microwave devices; spectral-domain analysis; strip lines; waveguide theory; CPW; MODFET; conductor loss; coplanar waveguide; metallic loss; modulation-doped field-effect transistor; multi-layered semiconductor structures; multilayer semiconducting media; planar transmission lines; signal transmission characteristics; slow-wave transmission lines; spectral domain analysis; Distributed parameter circuits; Epitaxial layers; FETs; Nonhomogeneous media; Planar transmission lines; Propagation losses; Semiconductivity; Semiconductor devices; Spectral analysis; Transmission lines;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
