Title :
Compensation degradation mechanism for high-efficiency GaAs IMPATT diodes
Author_Institution :
Royal Signals & Radar Establishment, Baldock, UK
Abstract :
The reliability of Cr Schottky-barrier high-efficiency (hi-lo) GaAs IMPATTs has been investigated. Devices operated under d.c. conditions degraded due to compensation of the electron concentration in the avalanche region of the devices. This degradation was not observed in diodes oven-tested with no bias applied.
Keywords :
IMPATT diodes; Schottky-barrier diodes; reliability; GaAs IMPATT diodes; Schottky barrier diodes; avalanche region; compensation degradation compensation; electron concentration; reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790054
