Title :
High-gain 9.25 GHz silicon bipolar transistor power amplifier
Author :
Wu, Y.S. ; Yuan, H.T. ; Wisseman, W.R.
Author_Institution :
Texas Instruments Incorporated, Dallas, USA
Abstract :
A four-stage silicon bipolar transistor power amplifier operating at centre frequency 9.25 GHz is reported. The amplifier has output power exceeding 1.0 W over an instantaneous bandwidth of approximately 800 MHz. The power-added efficiency of the amplifier is measured to be better than 18%.
Keywords :
bipolar transistor circuits; microwave amplifiers; power amplifiers; solid-state microwave circuits; four stage amplifier; high gain 9.25 GHz bipolar transistor power amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790063
