Title :
Negative differential resistance (NDR) frequency conversion with gain
Author :
Hwu, R.J. ; Djuandi, A. ; Lee, S.C.
Author_Institution :
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
The dependence of the conductance of negative differential resistance (NDR) devices in the presence of an RF signal of varying amplitude has been theoretically analyzed. Variable absolute negative conductance has been observed in both unbiased resonant tunneling devices and biased tunnel diode when the applied pump power is within the correct range. The theoretical observation of the dependence of the DC conductance of the NDR devices on the power level of the applied pump signal is supported by the experimental results. Absolute negative conductance of NDR devices provides the possibility of oscillation and harmonic oscillation up to the cut-off frequency of the device. Biased oscillators and self-oscillating frequency multipliers have been experimentally demonstrated using a tunnel diode. Unbiased oscillators have also been successfully realized with two back-to-back connected tunnel diodes which exhibit an anti-symmetrical I-V characteristic
Keywords :
frequency multipliers; harmonic oscillators (circuits); negative resistance; resonant tunnelling devices; solid-state microwave circuits; tunnel diodes; DC conductance; NDR devices; RF signal; anti-symmetrical I-V characteristic; applied pump power; biased tunnel diode; cut-off frequency; harmonic oscillation; negative differential resistance; self-oscillating frequency multipliers; tunnel diode; unbiased resonant tunneling devices; Equivalent circuits; Frequency conversion; Frequency measurement; Impedance; Oscillators; Power measurement; Resonant tunneling devices; Schottky diodes; Semiconductor diodes; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
