Title :
Rectification at n-n GaAs:(Ga,Al)As heterojunctions
Author :
Chandra, Aniruddha ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
n-n Ga0.7Al0.3As: GaAs heterojunction structures have been grown by l.p.e., with 1 × 1015 cm-3 net carriers in the ternary. N/W profiling across the heterojunction shows an accumulation region on the GaAs side and a depletion region on the (Ga, Al)As side. I/V characteristics at room temperature show significant rectification.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junctions; GaAlAs-GaAs heterojunctions; IV characteristics; accumulation region; depletion region; n-n heterojunctions; rectification;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790066
