DocumentCode :
949316
Title :
Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders
Author :
Radeka, V. ; Rescia, S. ; Rehn, L.A. ; Manfredi, P.F. ; Speziali, V.
Author_Institution :
Brookhaven Lab., Upton, NY, USA
Volume :
40
Issue :
5
fYear :
1993
fDate :
10/1/1993 12:00:00 AM
Firstpage :
1321
Lastpage :
1324
Abstract :
The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based on them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described. Tests have demonstrated that the noise behavior of the preamplifier is close to that which would be expected if the total noise referred at the preamplifier input were the thermal noise in the input JFET device; that is, the monolithic circuit approaches the noise performances of a hybrid preamplifier using discrete JFETs
Keywords :
junction gate field effect transistors; nuclear electronics; preamplifiers; JFET; buried layer planar technology; calorimetry; epitaxial-channel junction field-effect transistors; high luminosity colliders; monolithic preamplifier; noise behavior; radiation hardness characteristics; thermal noise; Calorimetry; Circuit noise; Cryogenics; Dielectrics; FETs; Helium; JFETs; Monolithic integrated circuits; Preamplifiers; Temperature;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.234543
Filename :
234543
Link To Document :
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