DocumentCode
949340
Title
Strain-induced optical waveguiding in GaAs epitaxial layers at 1.15 ¿m
Author
Westbrook, L.D. ; Robson, P.N. ; Majerfeld, A.
Author_Institution
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Volume
15
Issue
3
fYear
1979
Firstpage
99
Abstract
Transverse optical waveguide modes have been observed in GaAs Schottky-barrier electro-optic waveguide modulators with no electrical bias. This is attributed to the spatial variation of the dielectric constant generated by stresses originating in the metal Schottky-barrier stripe.
Keywords
III-V semiconductors; electro-optical devices; gallium arsenide; integrated optics; optical waveguides; GaAs Schottky barrier electro optical modulator; GaAs epitaxial layers; strain induced optical waveguiding; transverse modes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790072
Filename
4242989
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