DocumentCode :
949370
Title :
Design of narrow-linewidth phase-shifted distributed feedback lasers
Author :
Correc, P.
Author_Institution :
Centre National d´¿¿tudes des T¿¿l¿¿communications, Laboratoire de Bagneux, Division OMC, Bagneux, France
Volume :
135
Issue :
1
fYear :
1988
fDate :
2/1/1988 12:00:00 AM
Firstpage :
64
Lastpage :
67
Abstract :
By taking into account the practical constraints put on the bias current of a stripe geometry laser, we have calculated the minimum linewidth of a InGaAsP/InP phase-shifted distributed feedback laser, corresponding to the maximum available output power. We have obtained plots useful for the design of optimised structures showing that high coupling coefficients are not always desirable.
Keywords :
distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; spectral line breadth; InGaAsP-InP; bias current; narrow-linewidth phase-shifted distributed feedback lasers; semiconductor;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
DOI :
10.1049/ip-j.1988.0014
Filename :
4648653
Link To Document :
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