DocumentCode :
949372
Title :
Application of displacement damage dose analysis to low-energy protons on silicon devices
Author :
Messenger, Scott R. ; Burke, Edward A. ; Summers, Geoffrey P. ; Walters, Robert J.
Author_Institution :
SFA Inc., Largo, FL, USA
Volume :
49
Issue :
6
fYear :
2002
fDate :
12/1/2002 12:00:00 AM
Firstpage :
2690
Lastpage :
2694
Abstract :
Past work has shown that the degradation of GaAs solar cells in space radiation environments can be described with a single curve for all incident particle energies. This greatly simplifies the prediction of the performance of solar cells exposed to complex particle spectra. A similar approach has not been applied to silicon solar cells because the large diffusion length in silicon means that protons with relatively high energies lose a significant fraction of their energy in the active region of the cell. The proton energies are, therefore, not well defined in the device. In this paper, we show how the Monte Carlo code SRIM can be used to extend the displacement damage dose concept to cases where this occurs. The approach described can be used to analyze the response of complex device structures in the space environment.
Keywords :
Monte Carlo methods; elemental semiconductors; proton effects; silicon; solar cells; Monte Carlo code; SRIM; Si; Si solar cells; diffusion length; displacement damage dose concept; nonionizing energy loss; proton energies; space radiation environments; Degradation; Energy loss; Gallium arsenide; Helium; Laboratories; Monte Carlo methods; Photovoltaic cells; Photovoltaic systems; Protons; Silicon devices;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2002.805359
Filename :
1134205
Link To Document :
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