Title :
GaAs m.e.s.f.e.t. prepared by organometallic chemical vapour deposition
Author :
Morko¿¿, H. ; Andrews, Jeffrey ; Aebi, Verle
Author_Institution :
Varian Associates Inc., Corporate Solid State Laboratory, Palo Alto, USA
Abstract :
GaAs m.e.s.f.e.t.s with gate dimensions of 1.5 ¿m × 300 ¿m were fabricated in the epitaxial layers grown by organometallic chemical vapour deposition (o.m.c.v.d.) technique. The average saturation velocity in the channel was deduced to be 1.3 × 107 cm/s and is equal to that of epitaxial layers grown by AsCl3 chemical vapour deposition (c.v.d.). The velocity degraded region was confined to within about 350 Å of the interface. A gain of 10 dB and a noise figure of 3 dB with an associated gain of 5.5 dB at 8 GHz were measured.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; chemical vapour deposition; gallium arsenide; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 1.3 x 107 cm/s saturation velocity; 1.5 x 300 micron gates; 3 dB noise figure; 5.5 dB gain at 8 GHz; CVD; GaAs MESFET; VPE; epitaxial growth; organometallic chemical vapour deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790076
