Title :
The origin of photoluminescence lines in irradiated amorphous SiO2
Author :
Bakos, Tamas ; Rashkeev, Sergey N. ; Pantelides, Sokrates T.
Author_Institution :
Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
Irradiation of amorphous SiO2 produces defects with a characteristic photoluminescence line at 1.9 eV (∼ 630 nm) that is universally attributed to a nonbridging oxygen atom. We present results of first-principles calculations that describe a complete cycle of electronic transitions (absorption + luminescence) and show that two different defects are equally likely to be responsible: nonbridging oxygen atoms and hydroxyl (OH) groups weakly bonded to fourfold coordinated network Si atoms.
Keywords :
amorphous state; optical materials; photoluminescence; radiation effects; silicon compounds; 1.9 eV; 630 nm; SiO2; defects; electronic transitions; fourfold coordinated network Si atoms; irradiated amorphous SiO2; nonbridging oxygen atoms; photoluminescence lines; radiation-induced color centers; silica core optical fibers; weakly bonded hydroxyl groups; Amorphous materials; Bonding; Charge carrier processes; Electromagnetic wave absorption; Impurities; Optical attenuators; Optical fibers; Photoluminescence; Physics; Silicon compounds;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805342
