Radiation effects in low dielectric constant methyl-silsesquioxane films

Author

Petkov, Mihail P. ; Lynn, Kelvin G. ; Rodbell, Kenneth P. ; Volksen, Willi ; Miller, Robert D.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2724

Lastpage

2728

Abstract

The use of state-of-the-art microelectronic devices in space radiation environments faces new challenges with the adoption of low dielectric constant (low-k) materials as interlevel dielectrics. This is demonstrated in a preliminary study of methyl-silsesquioxane low-k films. We report radiation damage, induced by a 2 keV low-current-density (∼2×10⁶ s^-1 cm^-2) positron beam, and observed by positron annihilation spectroscopy.

Keywords

dielectric thin films; integrated circuit metallisation; permittivity; positron annihilation; radiation effects; space vehicle electronics; 2 keV; dielectric constant; interlevel dielectrics; low-k films; methyl-silsesquioxane films; positron annihilation spectroscopy; positron beam; radiation damage; radiation effects; space radiation environments; Dielectric constant; Dielectric materials; Electronics industry; Electrons; Ionizing radiation; Polymers; Positrons; Radiation effects; Space technology; Spectroscopy;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.805353

Filename

1134211