Title :
Radiation-induced charge trapping in low-k silsesquioxane-based intermetal dielectric films
Author :
Devine, R.A.B. ; Tringe, J.W. ; Chavez, J.R.
Author_Institution :
Center for High Technol. Mater., Albuquerque, NM, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
Radiation-induced charge trapping has been studied in cured hydrogen silsesquioxane low dielectric constant films subjected to electric fields during the radiation process. Evidence is found for electric field-dependent negative charge trapping with a dose0.47 variation. The possible origin of the negative charge trapping is discussed.
Keywords :
dielectric thin films; electron traps; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; permittivity; radiation effects; dielectric constant; electric field-dependent negative charge trapping; intermetal dielectric films; low-k silsesquioxane-based films; radiation process; radiation-induced charge trapping; Curing; Dielectric constant; Dielectric films; Dielectric materials; Dielectric thin films; Integrated circuit interconnections; Laboratories; Planarization; Space vehicles; Spinning;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.805352
