DocumentCode
949484
Title
The search for low-/spl epsi/ and ultra-low-/spl epsi/ dielectrics: how far can you get with polymers? Part 1: Background
Author
Maier, Gerhard
Author_Institution
Polymaterials AG, Kaufbeuren, Germany
Volume
20
Issue
2
fYear
2004
Firstpage
6
Lastpage
17
Abstract
The need for continuing miniaturization of the structures on microchips has always resulted in new challenges concerning material properties. One important issue is the necessity to use insulating materials with a dielectric constant below 2.5 and even below 2 in future chip generations. This article describes the basic requirements for the next generation of on-chip insulating materials (called interlayer dielectrics, ILD, or intermetal dielectrics, IMD) as well as the general approaches to adjust the material properties available for materials deposited from the gas phase and from solution.
Keywords
dielectric thin films; insulating thin films; integrated circuit technology; permittivity; polymers; dielectric constant; gas phase; insulating materials; interlayer dielectrics; intermetal dielectrics; low-/spl epsi/ dielectrics; material properties; microchip structure miniaturization; on-chip insulating materials; polymers; ultralow-/spl epsi/ dielectrics; Capacitance; Conducting materials; Delay; Dielectric constant; Dielectric materials; Dielectrics and electrical insulation; Integrated circuit interconnections; Metallization; Polymers; Wiring;
fLanguage
English
Journal_Title
Electrical Insulation Magazine, IEEE
Publisher
ieee
ISSN
0883-7554
Type
jour
DOI
10.1109/MEI.2004.1283257
Filename
1283257
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