DocumentCode :
949484
Title :
The search for low-/spl epsi/ and ultra-low-/spl epsi/ dielectrics: how far can you get with polymers? Part 1: Background
Author :
Maier, Gerhard
Author_Institution :
Polymaterials AG, Kaufbeuren, Germany
Volume :
20
Issue :
2
fYear :
2004
Firstpage :
6
Lastpage :
17
Abstract :
The need for continuing miniaturization of the structures on microchips has always resulted in new challenges concerning material properties. One important issue is the necessity to use insulating materials with a dielectric constant below 2.5 and even below 2 in future chip generations. This article describes the basic requirements for the next generation of on-chip insulating materials (called interlayer dielectrics, ILD, or intermetal dielectrics, IMD) as well as the general approaches to adjust the material properties available for materials deposited from the gas phase and from solution.
Keywords :
dielectric thin films; insulating thin films; integrated circuit technology; permittivity; polymers; dielectric constant; gas phase; insulating materials; interlayer dielectrics; intermetal dielectrics; low-/spl epsi/ dielectrics; material properties; microchip structure miniaturization; on-chip insulating materials; polymers; ultralow-/spl epsi/ dielectrics; Capacitance; Conducting materials; Delay; Dielectric constant; Dielectric materials; Dielectrics and electrical insulation; Integrated circuit interconnections; Metallization; Polymers; Wiring;
fLanguage :
English
Journal_Title :
Electrical Insulation Magazine, IEEE
Publisher :
ieee
ISSN :
0883-7554
Type :
jour
DOI :
10.1109/MEI.2004.1283257
Filename :
1283257
Link To Document :
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