• DocumentCode
    949484
  • Title

    The search for low-/spl epsi/ and ultra-low-/spl epsi/ dielectrics: how far can you get with polymers? Part 1: Background

  • Author

    Maier, Gerhard

  • Author_Institution
    Polymaterials AG, Kaufbeuren, Germany
  • Volume
    20
  • Issue
    2
  • fYear
    2004
  • Firstpage
    6
  • Lastpage
    17
  • Abstract
    The need for continuing miniaturization of the structures on microchips has always resulted in new challenges concerning material properties. One important issue is the necessity to use insulating materials with a dielectric constant below 2.5 and even below 2 in future chip generations. This article describes the basic requirements for the next generation of on-chip insulating materials (called interlayer dielectrics, ILD, or intermetal dielectrics, IMD) as well as the general approaches to adjust the material properties available for materials deposited from the gas phase and from solution.
  • Keywords
    dielectric thin films; insulating thin films; integrated circuit technology; permittivity; polymers; dielectric constant; gas phase; insulating materials; interlayer dielectrics; intermetal dielectrics; low-/spl epsi/ dielectrics; material properties; microchip structure miniaturization; on-chip insulating materials; polymers; ultralow-/spl epsi/ dielectrics; Capacitance; Conducting materials; Delay; Dielectric constant; Dielectric materials; Dielectrics and electrical insulation; Integrated circuit interconnections; Metallization; Polymers; Wiring;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    0883-7554
  • Type

    jour

  • DOI
    10.1109/MEI.2004.1283257
  • Filename
    1283257