Title :
Temperature dependence of impact ionisation rates in GaAs between 20° and 200°C
Author :
Capasso, Federico ; Nahory, R.E. ; Pollack, M.A.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
We report the temperature dependence, between 20° and 200°C, of free carrier impact ionisation rates in GaAs along the <100>, <110> and <111> directions for the electric field range 4-5 × 105 V/cm. These results should be of interest for the design of avalanche devices such as Impatt diodes which have high operating temperatures.
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; impact ionisation; 4 to 5 x 105 V/cm electric field; GaAs; Impatt diodes; avalanche devices; free carrier impact ionisation rates; high operating temperatures; temperature dependence; temperatures between 20 and 200 degrees C;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790086
