Title :
Narrow-beam divergence of the emission from low-threshold GaInAsP/InP double-heterostructure lasers
Author :
Itaya, Yoshio ; Katayama, Shinya ; Suematsu, Yasuharu
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
The angles of beam divergence perpendicular to the junction plane have been studied for low-threshold GaInAsP/InP double-heterostructure lasers with a thin active layer emitting at 1.31 ¿m. The narrowest beam divergence obtained was 23° for a laser diode with an active-layer thickness of 0.05 ¿m. At an active-layer thickness of 0.13 ¿m, the beam divergence was 40° with a threshold current density of 770 A/cm2.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; semiconductor junction lasers; 1.31 micron emission; 23 degree divergence; 770 A/cm2 threshold current density; GaInAsP/InP DH lasers; low threshold DH lasers; narrow beam emission divergence; thin active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790090
