Title :
GaAs monolithic integrated photoreceiver for 0.8 ¿m wavelength: association of Schottky photodiode and FET
Author :
Verriele, H. ; Lorriaux, J.L. ; Legry, P. ; Gouy, J.P. ; Vilcot, J.P. ; Decoster, D.
Author_Institution :
Université des Sciences et Techniques de Lille-Flandres-Artois, Centre Hyperfréquences et Semiconducteurs, UA CNRS 287, Villeneuve d´´Ascq, France
fDate :
4/1/1988 12:00:00 AM
Abstract :
We report the fabrication and the characterisation of a GaAs planar monolithic integrated photoreceiver. It consists of a semiplanar Schottky photodiode, associated with a field-effect transistor. Static, dynamic and noise properties have been investigated and interpreted, taking into account the particular characteristics of the material and the design of the integrated circuit. For example, sensitivity up to ¿30 dBm can be achieved at 250 Mbits/s for a 1E-9 bit error rate.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; integrated optoelectronics; optical communication equipment; photodiodes; receivers; 0.8 micron; 250 Mbit/s; FET; GaAs photoreceiver; Schottky photodiode; dynamic properties; field-effect transistor; integrated circuit; monolithic integrated photoreceiver; noise properties; semiconductor; static properties;
Journal_Title :
Optoelectronics, IEE Proceedings J
DOI :
10.1049/ip-j:19880020
