Title :
Mesa-substrate buried-heterostructure GaInAsP/InP injection lasers
Author :
Kishino, Katsumi ; Suematsu, Yasuharu ; Itaya, Yoshio
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
A new GaInAsP/InP injection laser with buried heterostructure fabricated by single-step epitaxial growth on a mesa substrate is reported. Single longitudinal-mode operation up to 1.4 times the threshold current Ith and linear light-output/current characteristics up to 3Ith are observed at 1.27 ¿m.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor junction lasers; GaInAsP/InP injection laser; buried heterostructure; linear light/current characteristics; mesa substrate; single longitudinal mode; single step epitaxial growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790098
