Heavy ion-induced charge collection mechanisms in CMOS active pixel sensor

Author

Belredon, Xavier ; David, Jean-Pierre ; Lewis, Dean ; Beauchene, Thomas ; Pouget, Vincent ; Barde, Sébastien ; Magnan, Pierre

Author_Institution

Centre de Toulouse, ONERA, Toulouse, France

Volume

49

Issue

6

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

2836

Lastpage

2843

Abstract

The CMOS active pixel sensors (APSs) can easily be designed for specific applications. Charge collection measurements have been achieved under heavy ion, alpha, and laser exposures on APS test die. The obtained results allow us to determinate the parameters to modify in order to design detectors dedicated to the detection of the space environment ionizing particles. Modeling of alpha exposure on APS complete this work. All these results demonstrate the important role of heavy ion-induced charge diffusion in APSs space applications.

Keywords

CMOS image sensors; ion beam effects; CMOS APS; CMOS active pixel sensors; CMOS image sensors; heavy ion-induced charge collection mechanisms; heavy ion-induced charge diffusion; space environment ionizing particles; CMOS image sensors; Charge measurement; Current measurement; Design optimization; Infrared detectors; Photodiodes; Pulse measurements; Sensor arrays; Space charge; Spectroscopy;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.806301

Filename

1134229