A power bipolar junction transistor model describing static and dynamic behavior

Author

Xu, Chihao ; Schroder, Dieter

Author_Institution

Robert Bosch GmbH, Reutlingen, Germany

Volume

7

Issue

4

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

734

Lastpage

740

Abstract

The power bipolar junction transistor (PBJT) is investigated and modeled. Particular interest is concentrated on the injection charge in the collector layer that dominates the large-signal characteristics of the device. Based on the semiconductor physics, ordinary differential equations describing the injection charge are derived. These equations take into account the recombination, charging, and discharging processes in the collector layer. A network model for the PBJT is derived by adding these equations to a standard model. This model is implemented in the IG-SPICE language. The static behavior, such as the quasi-saturation, and the dynamic behavior, including turn-off under the strong drive condition, can be simulated and analyzed. The simulation correlates well with the measurement

Keywords

SPICE; bipolar transistors; power transistors; semiconductor device models; IG-SPICE language; charging processes; collector layer; discharging processes; dynamic behavior; injection charge; large-signal characteristics; network model; ordinary differential equations; power bipolar junction transistor; quasi-saturation; recombination; semiconductor physics; static behavior; turn-off; Charge carrier processes; Circuit simulation; Conductors; Differential equations; Electron mobility; Partial differential equations; Physics; Poisson equations; Spontaneous emission; Stationary state;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.163652

Filename

163652